Part Number Hot Search : 
SPLB3701 VND5E05 TZA102 LCE30AT LT346 2N5042 HD74HCT 80C196
Product Description
Full Text Search

BCR20B - MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE

BCR20B_543106.PDF Datasheet

 
Part No. BCR20B BCR20E BCR20A BCR20C
Description MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE

File Size 80.36K  /  5 Page  

Maker


Mitsubishi Electric Semiconductor



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: BCR22PN
Maker: INFINEON
Pack: SOT-36..
Stock: Reserved
Unit price for :
    50: $0.18
  100: $0.17
1000: $0.16

Email: oulindz@gmail.com

Contact us

Homepage http://www.mitsubishichips.com/
Download [ ]
[ BCR20B BCR20E BCR20A BCR20C Datasheet PDF Downlaod from Datasheet.HK ]
[BCR20B BCR20E BCR20A BCR20C Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for BCR20B ]

[ Price & Availability of BCR20B by FindChips.com ]

 Full text search : MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE


 Related Part Number
PART Description Maker
AMF-5B-040080-15-25P AMF-4B-040080-15-25P AMF-6B-0 4000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
12000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
20000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
8000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
500 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
27500 MHz - 31000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
10 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
10 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
1000 MHz - 2000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
100 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
37000 MHz - 41000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
MITEQ, Inc.
MITEQ INC
2SA1900 A5800745 Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
Medium Power Transistor (-50V, -1A)
ROHM
2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 Medium power transistor (?60V, ?0.5A)
Medium Power Transistor (?32V,?1A)
Power Transistor (?60V, ?3A)
Low-frequency Transistor (-80V, -0.5A)
Power Transistor (?80V, ?1A)
Low VCE(sat) Transistor (?20V, ?3A)
Power transistor (?20V, ?2A)
General purpose amplification (?30V, ?1A)
Low frequency amplifier
Medium power transistor (−60V, −0.5A)
ROHM[Rohm]
TGA1073A TGA1073A-SCC 26- 34 GHz Medium Power Amplifier 26000 MHz - 35000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
TriQuint Semiconductor, Inc.
TRIQUINT[TriQuint Semiconductor]
2SB1182 2SB1188 2SB822 2SB911M 2SB1240 A5800350 2S From old datasheet system
Medium power Transistor(-32V/ -2A)
Medium power Transistor(-32V, -2A) 中等功率晶体管(- 32V的,- 2A型)
Rohm Co., Ltd.
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 -3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
UTC
ROHM[Rohm]
CSD882P CSD882R CSD882 CSD882E CSD882Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
CDIL[Continental Device India Limited]
BCP54 BCP54-16 BCP56-10 BCP56-16 BCP55-10 BCP55-16    NPN medium power transistors
TRANSISTOR MEDIUM POWER 晶体管中功率
NXP Semiconductors
PHILIPS[Philips Semiconductors]
Microchip Technology, Inc.
BC737 BC738 PNP SILICON AF MEDIUM POWER TRANSISTORS
(BC737 / BC738) NPN SILICON AF MEDIUM POWER TRANSISTORS
Micro Electronics
STX817 PNP MEDIUM POWER TRANSISTOR
NPN MEDIUM POWER TRANSISTOR
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
2SA1893 E000575 TRANSISTOR (STOROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) 晶体管(STOROBE闪光,中等功率放大器应用
STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
Toshiba, Corp.
Toshiba Corporation
SF16JZ51 SF16GZ51    MEDIUM POWER CONTROL APPLICATIONS
THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS
TOSHIBA[Toshiba Semiconductor]
 
 Related keyword From Full Text Search System
BCR20B barrier BCR20B standard BCR20B Supply BCR20B appreciate BCR20B Audio
BCR20B sfp configuration BCR20B transformer BCR20B international BCR20B Gain BCR20B gain
 

 

Price & Availability of BCR20B

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.79286694526672